Download 2SA908 Datasheet PDF
Inchange Semiconductor
2SA908
DESCRIPTION - High Power Dissipation- : PC= 150W(Max.)@TC=25℃ - Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) - plement to Type 2SC1585 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 VCEO Collector-Emitter Voltage -150 VEBO Emitter-Base Voltage -6 Collector Current-Continuous -15 Base Current-Continuous Collector Power Dissipation @TC=25℃ Tj Junction Temperature -5 ℃ Tstg Storage...