Datasheet Details
| Part number | 2SA908 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.74 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA908_InchangeSemiconductor.pdf |
|
|
Overview: isc Silicon PNP Power Transistor 2SA908.
| Part number | 2SA908 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.74 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA908_InchangeSemiconductor.pdf |
|
|
|
·High Power Dissipation- : PC= 150W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Complement to Type 2SC1585 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for amplifier and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -5 A 150 W 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA908 | (2SA907 - 2SA909) Silicon POwer Transistors | SavantIC |
| Part Number | Description |
|---|---|
| 2SA907 | POWER TRANSISTOR |
| 2SA909 | POWER TRANSISTOR |
| 2SA913 | POWER TRANSISTOR |
| 2SA913A | POWER TRANSISTOR |
| 2SA914 | POWER TRANSISTOR |
| 2SA940 | Silicon PNP Power Transistor |
| 2SA957 | POWER TRANSISTOR |
| 2SA958 | POWER TRANSISTOR |
| 2SA959 | POWER TRANSISTOR |
| 2SA963 | POWER TRANSISTOR |