Datasheet4U Logo Datasheet4U.com

2SA940 - Silicon PNP Power Transistor

General Description

Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) DC Current Gain : hFE= 40-140@ IC= -0.5A Complement to Type 2SC2073 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SA940 Silicon PNP Transistor Toshiba
2SA940 Silicon PNP Power Transistor NJS
2SA940 Transistors TRANSYS
2SA940 PNP Silicon Epitaxial Power Transistor Thinki Semiconductor
2SA940 PNP Transistor LGE

Other Datasheets by Inchange Semiconductor

Part Number Description
2SA907 POWER TRANSISTOR
2SA908 POWER TRANSISTOR
2SA909 POWER TRANSISTOR
2SA913 POWER TRANSISTOR
2SA913A POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·DC Current Gain : hFE= 40-140@ IC= -0.5A ·Complement to Type 2SC2073 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier , vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -150 V -5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -1.