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2SA940 Datasheet

The 2SA940 is a PNP Silicon Epitaxial Power Transistor. Download the datasheet PDF and view key features and specifications below.

Part Number2SA940
ManufacturerThinki Semiconductor
Overview 2SA940 ® 2SA940 Pb Free Plating Product Pb PNP Silicon Epitaxial Power Transistor FEATURES z Complements the 2SC2073. 9.90±0.20 φ ± 60 3. 0. 20 4.50±0.20 1.30±0.20 15.70±0.20 13.08±0.20 C. z Complements the 2SC2073. 9.90±0.20 φ ± 60 3. 0. 20 4.50±0.20 1.30±0.20 15.70±0.20 13.08±0.20 COLLECTOR 2 BASE 1 9.19±0.20 z Vertical Output Applications. 2.80±0.20 z Power Amplifier Applications. 6.50±0.20 APPLICATIONS 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER 3 12 0.80±0.20 2..
Part Number2SA940
DescriptionEpitaxial Planar PNP Transistor
ManufacturerGalaxy Microelectronics
Overview Epitaxial Planar PNP Transistor FEATURES z Complements the 2SC2073. APPLICATIONS z Power Amplifier Applications. z Vertical Output Applications. Pb Lead-free Production specification 2SA940 TO-220. z Complements the 2SC2073. APPLICATIONS z Power Amplifier Applications. z Vertical Output Applications. Pb Lead-free Production specification 2SA940 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage.
Part Number2SA940
DescriptionSilicon PNP Power Transistor
ManufacturerNJS
Overview • Collector-Emitter Breakdown Voltage :V(BR)CEo=-150V(Min) • DC Current Gain : hFE=40-140@lc=-0.5A • Complement to Type 2SC2073 APPLICATIONS • Designed for use in general purpose power amplifier, ver. c 4 mm DIN MIN MAX A 15.50 15.90 B 9.90 10.20 C 4.20 4.50 D 0.70 0.90 F 3.40 3.70 G 4.98 5.18 H 2.68 2.90 J 0.44 0.60 K 13.00 13.40 L 1.20 1.45 a 2.70 2.90 R 2.30 2.70 s 1.29 1.35 U 6.45 6.65 V 8.66 8.86 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package d.
Part Number2SA940
DescriptionSilicon PNP Power Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·DC Current Gain : hFE= 40-140@ IC= -0.5A ·Complement to Type 2SC2073 ·Minimum Lot-to-Lot variations for robust device performance and relia. OL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 -150 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 -150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage.

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