NJS 2SA940
Silicon PNP Power Transistor
| Part No. | 2SA940 |
|---|---|
| Datasheet | 2SA940 Download |
| Manufacturer |  NJS |
| Description | Silicon PNP Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
● Collector-Emitter Breakdown Voltage :V(BR)CEo=-150V(Min)● DC Current Gain : hFE=40-140@lc=-0.5A
● Complement to Type 2SC2073
APPLICATIONS
● Designed for use in general purpose power amplifier, vertical output applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Ic Collector Current-Continuous Total Power Dissipation PC @ TC=25'C Tj Junction Temperature Tstg Storage Temperature Range -150 V -150 V -5 V -1.5 A 25 W 150 °c -55~150 r THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 5.0 UNIT●c/w /"*'!●, ft PIN 1.BASE 2.COLLECTOR 3. EMITTER TO-220C package .- BM »
●* V H lx~ Uk A T JL ! ,.'. iT-H. '^TT^^ K rir» " -t *r* j -~» R(* c 4 mm DIN MIN MAX A 15.50 15.90 B 9.90 10.20 C 4.20 4.50 D 0.70 0.90 F 3.40 3.70 G 4.98 5.18 H 2.68 2.90 J 0.44 0.60 K 13.00 13.40 L 1.20 1.45 a 2.70 2.90 R 2.30 2.70 s 1.29 1.35 U 6.45 6.65 V 8.66 8.86 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice.
