Datasheet Details
| Part number | 2SA940 |
|---|---|
| Manufacturer | NJS |
| File Size | 66.76 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA940-NewJerseySemiconductor.pdf |
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Overview: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973).
| Part number | 2SA940 |
|---|---|
| Manufacturer | NJS |
| File Size | 66.76 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA940-NewJerseySemiconductor.pdf |
|
|
|
• Collector-Emitter Breakdown Voltage :V(BR)CEo=-150V(Min) • DC Current Gain : hFE=40-140@lc=-0.5A • Complement to Type 2SC2073 APPLICATIONS • Designed for use in general purpose power amplifier, vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Ic Collector Current-Continuous Total Power Dissipation PC @ TC=25'C Tj Junction Temperature Tstg Storage Temperature Range -150 V -150 V -5 V -1.5 A 25 W 150 °c -55~150 r THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 5.0 UNIT •c/w /"*'!•, ft PIN 1.BASE 2.COLLECTOR 3.
EMITTER TO-220C package .- BM » •* V H lx~ Uk A T JL !
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