High Collector Current:: IC= -4A
Low Collector Saturation Voltage
: VCE(sat)= -1.5V(Max)@IC= -3A
Complement to Type 2SD1586
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for power supplies or a variety of drives in
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isc Silicon PNP Power Transistor
DESCRIPTION ·High Collector Current:: IC= -4A ·Low Collector Saturation Voltage
: VCE(sat)= -1.5V(Max)@IC= -3A ·Complement to Type 2SD1586 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power supplies or a variety of drives in audio
and other equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-4
A
IB
Base Current-Continuous
Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-0.8
A
2 W
20
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SB1095
isc website：www.
2SB1095 Datasheet
