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2SB1669-Z - Silicon PNP Power Transistor

General Description

High DC current amplifier rate hFE≥100@VCE=-5V,IC=-0.5A 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SB1669-Z is a power transistor that can be directly driven from the output of an IC.This transistor

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isc Silicon PNP Power Transistor DESCRIPTION ·High DC current amplifier rate hFE≥100@VCE=-5V,IC=-0.5A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The 2SB1669-Z is a power transistor that can be directly driven from the output of an IC.This transistor is ideal for OA and FA equipment such as motor and solenoid drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICP Collector Current-Pulse -6 A PC Total Power Dissipation @ Ta=25℃ 1.