Datasheet4U Logo Datasheet4U.com

2SB1669 - PNP Transistor

General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Key Features

  • High DC current amplifier rate hFE ≥ 100 (VCE =.
  • 5.0 V, IC =.
  • 0.5 A).
  • Z type available for surface mounting supported prodcuts.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SB1669 PNP Transistor INCHANGE
2SB1669-Z Silicon PNP Power Transistor Inchange Semiconductor
2SB166040ML SCHOTTKY BARRIER DIODE CHIPS Silan Microelectronics Joint-stock
2SB166100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS Silan Microelectronics Joint-stock
2SB1664 PNP Epitaxial Planar Silicon Darlington Transistor Sanyo Semicon

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SB1628 PNP SILICON EPITAXIAL TRANSISTOR
2SB1657 Silicon PNP Transistor
2SB1658 Silicon PNP Transistor
2SB1068 PNP SILICON TRANSISTOR
2SB1093 PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET SILICON POWER TRANSISTOR www.DataSheet4U.com 2SB1669 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. ORDERING INFORMATION Part No. 2SB1669 2SB1669-S 2SB1669-Z Package TO-220AB TO-262 TO-220SMD FEATURES • High DC current amplifier rate hFE ≥ 100 (VCE = −5.0 V, IC = −0.