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Inchange Semiconductor
2SB881
DESCRIPTION - High DC Current Gain- : h FE = 2000(Min)@ IC= -3.5A - Wide Area of Safe Operation - Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3.5A - plement to Type 2SD1191 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulators applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 VCEO Collector-Emitter Voltage -60 VEBO Emitter-Base Voltage -6 Collector Current-Continuous -7 Collector Current-Peak Collector Power Dissipation TC=25℃ PC Collector Power Dissipation Ta=25℃ Tj Junction Temperature -10 35...