Datasheet Details
| Part number | 2SB881 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.49 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SB881-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Darlington Power Transistor.
| Part number | 2SB881 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.49 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SB881-InchangeSemiconductor.pdf |
|
|
|
·High DC Current Gain- : hFE = 2000(Min)@ IC= -3.5A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3.5A ·Complement to Type 2SD1191 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulators applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak Collector Power Dissipation TC=25℃ PC Collector Power Dissipation Ta=25℃ Tj Junction Temperature -10 A 35 W 1.75 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB881 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA, RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA, IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3.5A, IB= -7mA VBE(sat) Base-Emitter Saturation Voltage IC= -3.5A, IB= -7mA ICBO Collector Cutoff Current VCB= -40V, IE= 0 IEBO Emitter Cutoff Current VEB= -5V;
IC= 0 hFE DC Current Gain IC= -3.5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB881 | PNP Transistor | Sanyo Semicon Device |
| Part Number | Description |
|---|---|
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