2SB883 - Silicon PNP Power Transistor

Datasheet Summary

Description

High DC Current Gain- : hFE = 2000(Min)@ IC= -7A Wide Area of Safe Operation Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -7A Complement to Type 2SD1193 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Inchange Semiconductor

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Datasheet Details

Part number	2SB883
Manufacturer	Inchange Semiconductor
File Size	218.09 KB
Description	Silicon PNP Power Transistor
Datasheet	2SB883 Datasheet
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isc Silicon PNP Darlington Power Transistor 2SB883 DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= -7A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -7A ·Complement to Type 2SD1193 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control applications.

Published: Jun 18, 2016 |