2SB941 Overview
·Low Collector Saturation Voltage- : VCE(sat)= -1.2V(Max)@IC= -3A ·Good Linearity of hFE ·plement to Type 2SD1266 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency power amplifications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO...
