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2SB941A - Power Transistors

Download the 2SB941A datasheet PDF. This datasheet also covers the 2SB941 variant, as both devices belong to the same power transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • q q q 7.5±0.2 Solder Dip 4.0 14.0±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB941 2SB941A 2SB941 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C) Ratings.
  • 60.
  • 80.
  • 60.
  • 80.
  • 5.
  • 5.
  • 3 35 2 150.
  • 55 to +150 Unit V emitter voltage 2SB941A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SB941_PanasonicSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Power Transistors 2SB941, 2SB941A www.DataSheet4U.net Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1266 and 2SD1266A Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 s Features q q q 7.5±0.2 Solder Dip 4.0 14.0±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB941 2SB941A 2SB941 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C) Ratings –60 –80 –60 –80 –5 –5 –3 35 2 150 –55 to +150 Unit V emitter voltage 2SB941A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C 16.7±0.