Datasheet Details
| Part number | 2SB962-Z |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.45 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SB962-Z-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB962-Z.
| Part number | 2SB962-Z |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.45 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SB962-Z-InchangeSemiconductor.pdf |
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·Low Collector Saturation Voltage : VCE(sat)= -0.3V(Typ)@IC= -2.0A ·PNP silicon epitaxial transistor ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The 2SB962-Z is designed for Audio frequency amplifier and switching ,especially in hybrid integrated circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICP Collector Current-Pulse PC Total Power Dissipation @ Ta=25℃ -6 A 2.0 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB962-Z ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCE(sat)NOTE Collector-Emitter Saturation Voltage VBE(sat)NOTE Base-Emitter Saturation Voltage IEBO Emitter Cutoff Current ICBO Collector Cutoff Current hFE1NOTE DC Current Gain hFE2NOTE DC Current Gain IC= -2.0A;
IB= -200mA IC= -2.0A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB962-Z | PNP Transistor | Kexin |
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2SB962-Z | PNP Transistor | Renesas |
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| 2SB924 | Silicon PNP Power Transistor |