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2SB962-Z - Silicon PNP Power Transistor

General Description

Low Collector Saturation Voltage : VCE(sat)= -0.3V(Typ)@IC= -2.0A PNP silicon epitaxial transistor 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SB962-Z is designed for Audio frequency amplifier and

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB962-Z DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= -0.3V(Typ)@IC= -2.0A ·PNP silicon epitaxial transistor ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The 2SB962-Z is designed for Audio frequency amplifier and switching ,especially in hybrid integrated circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICP Collector Current-Pulse PC Total Power Dissipation @ Ta=25℃ -6 A 2.