2SB965 Description
·Low Collector Saturation Voltage : VCE(sat)= -0.55V(Typ)@IC= -4.0A ·Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB965 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)NOTE Collector-Emitter Saturation Voltage IC= -4.0A;.