2SB965 Description
Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SB965 SYMBOL TYP. MAX UNIT V(BR)CEO VCEsat VBEsat ICBO IEBO hFE -1 hFE -2 COB fT Collector-emitter breakdown voltage IC=-25mA ;IB=0 IC=-4A ;IB=-0.4A IC=-4A ;IB=-0.4A VCB=-120V; Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB965 Fig.2 Outline dimensions (unindicated...