2SB975 - Silicon PNP Darlington Power Transistor

Datasheet Summary

Description

High DC Current Gain- : hFE = 2000(Min)@ IC= -3A Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3A Complement to Type 2SD1309 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency

Inchange Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	2SB975
Manufacturer	Inchange Semiconductor
File Size	190.47 KB
Description	Silicon PNP Darlington Power Transistor
Datasheet	2SB975 Datasheet
Additional preview pages of the 2SB975 datasheet.

📁 Similar Datasheet

2SB975 - SILICON POWER TRANSISTOR (SavantIC)
2SB970 - PNP Transistor (Panasonic Semiconductor)
2SB970 - Transistor (Kexin)
2SB970 - Transistor (TY Semiconductor)
2SB974 - SILICON POWER TRANSISTOR (SavantIC)
2SB976 - PNP Transistor (Panasonic Semiconductor)
2SB976 - Power Transistors (Panasonic Semiconductor)
2SB977 - PNP Epitaxial Silicon Transistor (Panasonic Semiconductor)
2SB977A - PNP Epitaxial Silicon Transistor (Panasonic Semiconductor)
2SB979 - SILICON POWER TRANSISTOR (SavantIC)

Other Datasheets by Inchange Semiconductor

2SB974 - Silicon PNP Darlington Power Transistor
2SB979 - Silicon PNP Darlington Power Transistor
2SB900 - Silicon PNP Power Transistor
2SB903 - Silicon PNP Power Transistor
2SB904 - Silicon PNP Power Transistor
2SB920 - Silicon PNP Power Transistor
2SB921 - Silicon PNP Power Transistor
2SB922 - Silicon PNP Power Transistor

Full PDF Text Transcription

Click to expand full text

INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2SB975 DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= -3A ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3A ·Complement to Type 2SD1309 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low-speed switching industrial use.

Published: Oct 25, 2013 |