| Part number | 2SB979 |
|---|---|
| Datasheet | 2SB979_InchangeSemiconductor.pdf |
| File Size | 220.08 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon PNP Darlington Power Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB979 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SB979 | SILICON POWER TRANSISTOR | SavantIC |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SB974 | Silicon PNP Darlington Power Transistor |
| 2SB975 | Silicon PNP Darlington Power Transistor |
| 2SB900 | Silicon PNP Power Transistor |
| 2SB903 | Silicon PNP Power Transistor |
| 2SB904 | Silicon PNP Power Transistor |
| 2SB920 | Silicon PNP Power Transistor |
| 2SB921 | Silicon PNP Power Transistor |
| 2SB922 | Silicon PNP Power Transistor |
| 2SB923 | Silicon PNP Power Transistor |
| 2SB924 | Silicon PNP Power Transistor |
