High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 120V(Min)
Fast Switching Speed
Wide Area of Safe Operation
Complement to Type 2SA1072
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
High frequency power amplifier
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 120V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Complement to Type 2SA1072 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High frequency power amplifier ·Audio power amplifiers ·Switching regulators ·DC-DC converters
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
12
A
120
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
2SC2522
isc website：www.iscsemi.
2SC2522 Datasheet
