| Part number | 2SC2526 |
|---|---|
| Datasheet | 2SC2526-InchangeSemiconductor.pdf |
| File Size | 224.14 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
|
|
·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·plement to Type 2SA1076 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter Base...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SC2526 | SILICON HIGH SPEED POWER TRANSISTOR | Fujitsu Media Devices Limited |
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