Datasheet Details
| Part number | 2SC2735 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 179.57 KB |
| Description | Silicon NPN RF Transistor |
| Datasheet | 2SC2735_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Transistor INCHANGE Semiconductor 2SC2735.
| Part number | 2SC2735 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 179.57 KB |
| Description | Silicon NPN RF Transistor |
| Datasheet | 2SC2735_InchangeSemiconductor.pdf |
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·Silicon NPN epitaxial type ·Local oscillator wide band amplifier ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in UHF/VHF frequency converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 50 mA 0.15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Transistor INCHANGE Semiconductor 2SC2735 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA ;
IB= 4mA ICBO Collector Cutoff Current VCB= 10V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2735 | Silicon NPN Transistor | Hitachi Semiconductor |
 |
2SC2735 | Silicon NPN Transistor | Renesas |
 |
2SC2735 | Silicon NPN Transistor | Kexin |
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