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2SC2735 - Silicon NPN RF Transistor

General Description

Silicon NPN epitaxial type Local oscillator wide band amplifier 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in UHF/VHF frequency converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL

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isc Silicon NPN Transistor INCHANGE Semiconductor 2SC2735 DESCRIPTION ·Silicon NPN epitaxial type ·Local oscillator wide band amplifier ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in UHF/VHF frequency converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 50 mA 0.15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.