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2SC2987A - Silicon NPN Power Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) Good Linearity of hFE Complement to Type 2SA1227A APPLICATIONS

For audio frequency power amplifier applications.

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC2987A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1227A APPLICATIONS ·For audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 12 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 20 A 120 W 150 ℃ -55~150 ℃ isc Website：www.iscsemi.