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2SC2983 - Silicon NPN Power Transistor

General Description

Excellent linearity of hFE Low collector-to-emitter saturation voltage Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and driver stage amplifier app

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and driver stage amplifier applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC IB PC TJ Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation Junction Temperature Tstg Storage Temperature Range 160 V 160 V 5 V 1.5 A 0.3 A 15 W 150 ℃ -55~150 ℃ 2SC2983 isc website：www.iscsemi.