Semiware 2SC2983
NPN Plastic-Encapsulate Transistor
APPLICATIONS
Low Frequency Power Amplifier APPROVALS RoHS Compliance with 2011/65/EU HF Compliance with IEC61249-2-21:2003MAXIMUM RATINGS
(TA=25°C ) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Current ‒ Continuous(Pulse) Collector Power Dissipation Total Power Dissipation TC=25℃ Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP PC Ptot TJ TSTG 2SC2983 Plastic-Encapsulate Transistor (NPN) C BC E TO-252 2SC2983 Marking C (2) B (1) E (3) Schematic Symbol Value 180 160 5.0 1.5 3.0 1.0 1.25 150 -55~+150 Unit V A A W W ℃ ℃ Product Datasheet Rev. A2.0 1/6 Build Your Design As You Will R 2SC2983 Plastic-Encapsulate Transistor (NPN)ELECTRICAL CHARACTERISTICS
(TA=25°C) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter-Base Cut-Off Current DC Current Gain Base to Emitter Voltage Collect...