Toshiba 2SC2983
Silicon NPN Transistor
| Part No. | 2SC2983 |
|---|---|
| Datasheet | 2SC2983 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
APPLICATIONS
Driver Stage AmplifierAPPLICATIONS
2SC2983 Unit: mm● High transition frequency: fT = 100 MHz (typ.)
● Complementary to 2SA1225
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 160 V Collector-emitter voltage VCEO 160 V Emitter-base voltage VEBO 5 V Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C IC IB PC 1.5 A 0.3 A 1.0 W 15 Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C JEDEC JEITA ― ― Note1: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-7J1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 0.36 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook...
