Galaxy Century Microelectronics 2SC2983
Silicon NPN Transistor
| Part No. | 2SC2983 |
|---|---|
| Datasheet | 2SC2983 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
FEATURES
● High transition frequency:fT=100MHz(typ).● Complementary to 2SA1225. Pb Lead-free
APPLICATIONS
● Power AmplifierAPPLICATIONS
.● Driver Stage Amplifier
APPLICATIONS
. Production specification 2SC2983 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5V IC Collector Current 1.5 A IB Base Current 0.3 A PC Collector Power Dissipation 1W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V/(W)011 Rev.A 1 Production specification Silicon NPN Epitaxial Type 2SC2983ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX Collector-emitter breakdown voltage Emitter-base breakdown voltage VCEO VEBO IC=10mA,IB=0 IE=1mA,IC=0 160 5 Collector cut-off current ICB
