2SC2983 - Silicon NPN Transistor

Galaxy Microelectronics

Key Features

High transition frequency:fT=100MHz(typ).
Complementary to 2SA1225. Pb Lead-free.

2SC2983 silicon npn transistor by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	2SC2983
Manufacturer	Galaxy Microelectronics
File Size	238.47 KB
Description	Silicon NPN Transistor
Datasheet	2SC2983 Datasheet

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Full PDF Text Transcription (Reference)

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Silicon NPN Epitaxial Type FEATURES  High transition frequency:fT=100MHz(typ).  Complementary to 2SA1225. Pb Lead-free APPLICATIONS  Power Amplifier Applications.  Driver Stage Amplifier Applications. Production specification 2SC2983 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5V IC Collector Current 1.5 A IB Base Current 0.3 A PC Collector Power Dissipation 1W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V/(W)011 Rev.A www.gmesemi.