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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2983
Power Amplifier Applications Driver Stage Amplifier Applications
2SC2983
Unit: mm
• High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 160 V
Collector-emitter voltage
VCEO 160 V
Emitter-base voltage
VEBO 5 V
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
IC IB
PC
1.5 A 0.3 A 1.0
W 15
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
−55 to 150
°C
JEDEC JEITA
― ―
Note1: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-7J1A
temperature/current/voltage and the significant change in temperature, etc.
2SC2983 Datasheet
