| Part Number | 2SC2983 Datasheet |
|---|---|
| Manufacturer | Semiware Semiconductor |
| Overview | Silicon NPN Transistor In a TO-252 Plastic Package APPLICATIONS Low Frequency Power Amplifier APPROVALS RoHS Compliance with 2011/65/EU HF Compliance with IEC61249-2-21:2003 MAXIMUM RATINGS (TA=25°. ge Collector Cut-Off Current Emitter-Base Cut-Off Current DC Current Gain Base to Emitter Voltage Collector to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Symbol VCBO VCEO VEBO ICBO IEBO hFE VBE VCE(sat) fT Cob Test Conditions IC=1.0mA,IE=0 IC=10mA,IB=0 IE=1.0mA,IC=0. |
2SC2983 Datasheet and Specifications PDF
The 2SC2983 is a NPN Plastic-Encapsulate Transistor.
Key Specifications
| Max Operating Temp | 150 °C |
|---|
| Part Number | 2SC2983 Datasheet |
|---|---|
| Description | Silicon NPN Transistor |
| Manufacturer | Toshiba |
| Overview | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2983 Power Amplifier Applications Driver Stage Amplifier Applications 2SC2983 Unit: mm • High transition frequency: fT = 100 MHz (typ.). mum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2010-03-10 Electrical Ch. |
| Part Number | 2SC2983 Datasheet |
|---|---|
| Description | Silicon NPN Power Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operatio. oltage VCE= 5V; IC= 500mA V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 ICBO Collector Cutoff Current VCB= 160V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 . |
| Part Number | 2SC2983 Datasheet |
|---|---|
| Description | Silicon NPN Transistor |
| Manufacturer | Galaxy Microelectronics |
| Overview |
Silicon NPN Epitaxial Type
FEATURES
High transition frequency:fT=100MHz(typ).
Complementary to 2SA1225.
Pb
Lead-free
APPLICATIONS
Power Amplifier Applications. Driver Stage Amplifier App.
* High transition frequency:fT=100MHz(typ). * Complementary to 2SA1225. Pb Lead-free APPLICATIONS * Power Amplifier Applications. * Driver Stage Amplifier Applications. Production specification 2SC2983 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specifi. |