• Part: 2SC2982
  • Description: Silicon NPN Transistor
  • Manufacturer: Toshiba
  • Size: 140.49 KB
Download 2SC2982 Datasheet PDF
Toshiba
2SC2982
2SC2982 is Silicon NPN Transistor manufactured by Toshiba.
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) Storobo Flash Applications Medium Power Amplifier Applications Unit: mm - High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 140 (typ.), (VCE = 1 V, IC = 2 A) - Low saturation voltage : VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA) - Small flat package - PC = 1.0 to 2.0 W (mounted on a ceramic substrate) - plementary to 2SA1314 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse (Note 1) Base current DC Pulse (Note 1) Collector...