The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3547A
DESCRIPTION ·High Current-Gain—Bandwidth Product
fT = 4 GHz TYP. @ VCE = 10 V,IC = 5 mA
APPLICATIONS ·Designed for TV tuner, UHF oscillator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
IB Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
20 V
12 V
3V
30 mA
15 mA
0.15 W
125 ℃
-55~125
℃
isc website:www.iscsemi.