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2SC3545 - Silicon NPN RF Transistor

General Description

Low Base Time Constant; rbb’

CC = 4 ps TYP.

fT= 2 GHz TYP.

Cre = 0.48 pF TYP.

100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLIC

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isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC3545 DESCRIPTION ·Low Base Time Constant; rbb’ • CC = 4 ps TYP. ·High Gain Bandwidth Product fT= 2 GHz TYP. @ IE= -5mA, VCE= 10V ·Low Feedback Capacitance; Cre = 0.48 pF TYP. ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as UHF oscillator and mixer in a tuner of a TV receiver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 50 mA 0.15 W 125 ℃ Tstg Storage Temperature Range -65~125 ℃ isc website:www.iscsemi.