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2SC3545 - NPN Silicon Epitaxial Transistor

Key Features

  • 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 30 15 3.0 50 150 125 -65 to +125 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector Cutoff Current DC Current Gain Collector Saturation Voltage Gain Bandwidth P.

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SMD Type NPN Silicon Epitaxial Transistor 2SC3545 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 Low Collector to Base Time Constant; CC rb’ b = 4 ps TYP. Low Feedback Capacitance; Cre = 0.48 pF TYP. 0.55 High Gain Bandwidth Procuct; fT = 2 000 MHz TYP. +0.1 1.3-0.1 Features 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 30 15 3.