2SC3679 Description
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3679 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS...