2SC3680 - Silicon NPN Power Transistors

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Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

Inchange Semiconductor

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Datasheet Details

Part number	2SC3680
Manufacturer	Inchange Semiconductor
File Size	199.24 KB
Description	Silicon NPN Power Transistors
Datasheet	2SC3680 Datasheet
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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 14 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.5 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3680 isc website：www.iscsemi.

Published: Oct 25, 2013 |