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2SC3680
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3680 900 800 7 7(Pulse14) 3.5 120(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Switching Regulator and General Purpose
(Ta=25°C)
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=3A IC=3A, IB=0.6A IC=3A, IB=0.6A VCE=12V, IE=–2A VCB=10V, f=1MHz 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 105typ
External Dimensions MT-100(TO3P)
5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1
2SC3680
Unit
µA µA
19.9±0.3
4.0
V V MHz pF
a b
ø3.2±0.1
20.0min
4.0max
V
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.
2SC3680 Datasheet
