Power Transistor
| Part number | 2SC3729 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.10 KB |
| Description | Power Transistor |
| Datasheet | 2SC3729_InchangeSemiconductor.pdf |
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection output applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter...
| Part Number | Description |
|---|---|
| 2SC3720 | Power Transistor |
| 2SC3709 | Silicon NPN Power Transistor |
| 2SC3710A | Silicon NPN Power Transistor |
| 2SC3714 | Silicon NPN Transistor |
| 2SC3719 | Power Transistor |
| 2SC3737 | Power Transistor |
| 2SC3738 | Silicon NPN Transistor |
| 2SC3754 | Silicon NPN Power Transistor |
| 2SC3783 | Silicon NPN Power Transistor |
| 2SC3789 | Silicon NPN Transistor |
