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2SC3789 - Silicon NPN Transistor

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) Complement to Type 2SA1479 APPLICATIONS

High-definition CRT display.

Color TV chroma output, high breakdown voltage drivers.

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3789 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Complement to Type 2SA1479 APPLICATIONS ·High-definition CRT display. ·Color TV chroma output, high breakdown voltage drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 0.1 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature Tstg Storage Temperature Range 0.2 A 7 W 1.5 150 ℃ -55~150 ℃ isc Website：www.iscsemi.