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2SC3789 - PNP/NPN Epitaxial Planar Silicon Transistors

Datasheet Summary

Features

  • High breakdown voltage (VCEO≥300V).
  • Excellent high frequency characteristic : Cre=1.8pF (typ).
  • Adoption of MBIT process.
  • No insulator required for mounting, which contrib- utes to reducing the cost and the number of manufacturing processes.
  • Plastic-covered heat sink facilitating high-density mounting.
  • Directly interchange able with TO-126 because the package is designed based on the conventional package dimensions. B : Base C : Collector E : Emitter SANYO : T.

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Datasheet Details

Part number 2SC3789
Manufacturer Sanyo Semicon Device
File Size 155.03 KB
Description PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet download datasheet 2SC3789 Datasheet
Additional preview pages of the 2SC3789 datasheet.

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Full PDF Text Transcription

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Ordering number:EN2093 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1479/2SC3789 High-Definiton CRT Display Video Output Applications Applications · High-definition CRT display. · Color TV chroma output, high breakdown voltage drivers. Package Dimensions unit:mm 2042A [2SA1479/2SC3789] Features · High breakdown voltage (VCEO≥300V). · Excellent high frequency characteristic : Cre=1.8pF (typ). · Adoption of MBIT process. · No insulator required for mounting, which contrib- utes to reducing the cost and the number of manufacturing processes. · Plastic-covered heat sink facilitating high-density mounting. · Directly interchange able with TO-126 because the package is designed based on the conventional package dimensions.
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