High Breakdown Voltage: V(BR)CBO= 1500V(Min)
High Switching Speed
High Reliability
APPLICATIONS
Very high-definition CRT display horizontal deflection output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
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INCHANGE Semiconductor
www.DataSheet4U.com
isc Product Specification
isc Silicon NPN Power Transistor
2SC4924
DESCRIPTION ·High Breakdown Voltage: V(BR)CBO= 1500V(Min) ·High Switching Speed ·High Reliability
APPLICATIONS ·Very high-definition CRT display horizontal deflection output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
10
A
ICP
Collector Current-Peak Collector Power Dissipation @ Ta=25℃
25
A
3.0 W
PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 70
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
www.DataSheet4U.
2SC4924 Datasheet
