Datasheet4U Logo Datasheet4U.com

2SC4924 - NPN TRANSISTOR

Key Features

  • High speed (tf typ=100ns).
  • High reliability (Adoption of HVP process).
  • High breakdown voltage (VCBO=1500V).
  • Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC4924] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 2.0 1.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junc.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC4924 Silicon NPN Power Transistor Inchange Semiconductor
2SC4923 SILICON POWER TRANSISTOR SavantIC
2SC4926 NPN TRANSISTOR Hitachi Semiconductor
2SC4927 NPN TRANSISTOR Hitachi Semiconductor
2SC4927 SILICON POWER TRANSISTOR SavantIC

Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SC4920 NPN TRANSISTOR
2SC4921 NPN TRANSISTOR
2SC4922 NPN TRANSISTOR
2SC4923 NPN TRANSISTOR
2SC4909 NPN TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number:EN4757 NPN Triple Diffused Planar Silicon Transistor 2SC4924 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed (tf typ=100ns). · High reliability (Adoption of HVP process). · High breakdown voltage (VCBO=1500V). · Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC4924] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 2.0 1.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tc=25˚C w w w . D a t a S h e e t . c o . k r 5.45 5.