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2SC5191 - Silicon NPN Transistor

General Description

Low Voltage Operation ,Low Phase Distortion

NF = 1.5 dB TYP.

@VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP.

Large Absolute Maximum Collector Current IC = 100 mA 100% avalanche tested Minimum Lot-to-Lot variations for robust devic

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isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC5191 DESCRIPTION ·Low Voltage Operation ,Low Phase Distortion ·Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz ·Large Absolute Maximum Collector Current IC = 100 mA ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low-noise and small signal amplifiers from VHF ~ UHF band. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 9 V VCEO Collector-Emitter Voltage 6 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 100 mA 0.