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2SC5191 - NPN TRANSISTOR

Key Features

  • Low Voltage Operation, Low Phase Distortion.
  • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz.
  • Large Absolute Maximum Collector Current 2.9±0.2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON TRANSISTOR 2SC5191 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current 2.9±0.2 PACKAGE DRAWINGS (Unit: mm) 2.8±0.2 0.4 +0.1 −0.05 1.5 0.65 +0.1 −0.15 0.95 IC = 100 mA • Mini Mold Package EIAJ: SC-59 2 T88 0.95 ORDERING INFORMATION PART NUMBER 2SC5191-T1 0.3 Marking 0.16 +0.1 −0.06 QUANTITY 3 Kpcs/Reel PACKING STYLE Embossed tape 8 mm wide. Pin 3 (collector) face to perforation side of the tape. Embossed tape 8 mm wide. Pin 1 (Emitter), Pin 2 (Base) face to perforation side of the tape. 1.1 to 1.