2SD1662 Description
hFE= 1000(Min.)@ IC= 15A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 1.5V(Max.)@ IC= 15A APPLICATIONS ·Designed for high current switching application.
- Part: 2SD1662
- Manufacturer: Inchange Semiconductor
- Size: 123.95 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
Toshiba |
2SD1662 | Silicon NPN Transistor |