2SD1662 Overview
hFE= 1000(Min.)@ IC= 15A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 1.5V(Max.)@ IC= 15A APPLICATIONS ·Designed for high current switching application.
Silicon NPN Power Transistor
| Part number | 2SD1662 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 123.95 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD1662-InchangeSemiconductor.pdf |
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hFE= 1000(Min.)@ IC= 15A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 1.5V(Max.)@ IC= 15A APPLICATIONS ·Designed for high current switching application.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| 2SD1662 | Silicon NPN Transistor | Toshiba Semiconductor |
| Part Number | Description |
|---|---|
| 2SD1663 | Power Transistor |
| 2SD1601 | Power Transistor |
| 2SD1602 | Power Transistor |
| 2SD1604 | Power Transistor |
| 2SD1605 | Power Transistor |
| 2SD1606 | Silicon NPN Power Transistor |
| 2SD1608 | Power Transistor |
| 2SD1640 | Silicon NPN Power Transistor |
| 2SD1646 | Power Transistor |
| 2SD1653 | Power Transistor |