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2SD1662 - Silicon NPN Power Transistor

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Description

High DC Current Gain : hFE= 1000(Min.)@ IC= 15A Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) Low Collector Saturation Voltage : VCE(sat) = 1.5V(Max.)@ IC= 15A APPLICATIONS

Designed for high current switching application.

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Datasheet Details

Part number 2SD1662
Manufacturer Inchange Semiconductor
File Size 123.95 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet 2SD1662 Datasheet
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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD1662 DESCRIPTION ·High DC Current Gain : hFE= 1000(Min.)@ IC= 15A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 1.5V(Max.)@ IC= 15A APPLICATIONS ·Designed for high current switching application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 100 V 5V IC Collector Current-Continuous 15 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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