2SD1662
2SD1662 is Silicon NPN Transistor manufactured by Toshiba.
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
High Current Switching Applications
Unit: mm
- High DC current gain: h FE = 1000 (min) (VCE = 3 V, IC = 15 A)
- Low collector saturation voltage: VCE (sat) = 1.5 V (max) (IC = 15 A)
- Monolithic construction with built-in base-emitter shunt resistor.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB
Tj Tstg
Rating 100 100 5 15 1
- 55 to 150
Unit V V V A A
°C °C
Equivalent Circuit
COLLECTOR
BASE
≈ 2 kΩ
≈ 200 Ω
EMITTER
JEDEC
―
JEITA
―
TOSHIBA
2-16C1A
Weight: 4.7 g...
