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2SD1662
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
2SD1662
High Current Switching Applications
Unit: mm
· High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 15 A) · Low collector saturation voltage: VCE (sat) = 1.5 V (max) (IC = 15 A) · Monolithic construction with built-in base-emitter shunt resistor.
2SD1662 Datasheet
