Datasheet4U Logo Datasheet4U.com

2SD180 - Silicon NPN Power Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 70V(Min.) Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 5A Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier a

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD1800 NPN Epitaxial Silicon Transistor Sanyo Semicon Device
2SD1801 Bipolar Transistor ON Semiconductor
2SD1801 PNP/NPN Epitaxial Planar Silicon Transistors Sanyo Semicon Device
2SD1802 NPN Transistor TRANSYS
2SD1802 NPN Epitaxial Planar Silicon Transistors GME

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD1801 Silicon NPN Power Transistor
2SD1802 Silicon NPN Power Transistor
2SD1803 TO-126 Silicon NPN Power Transistor
2SD1805 Silicon NPN Power Transistor
2SD1816 Silicon NPN Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 70V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 5A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier and low speed switching ·Suitable for output stages of 30 ~35 watts audio amplifier and DC-DC converter.