2SD2449 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·High DC Current Gain- : hFE= 3000( Min.) @(IC= 8A, VCE= 5V) ·Low Collector Saturation Voltage-.
2SD2449 datasheet by Inchange Semiconductor.
| Part number | 2SD2449 |
|---|---|
| Datasheet | 2SD2449_InchangeSemiconductor.pdf |
| File Size | 219.94 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Darlington Power Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·High DC Current Gain- : hFE= 3000( Min.) @(IC= 8A, VCE= 5V) ·Low Collector Saturation Voltage-.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| 2SD2449 | Silicon NPN Transistor | Toshiba Semiconductor |
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