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2SD2449
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor)
2SD2449
Power Amplifier Applications
Unit: mm
• High breakdown voltage: VCEO = 160 V (min) • Complementary to 2SB1594
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB
PC
Tj Tstg
Rating 160 160 5 10 1
150
150 −55 to 150
Equivalent Circuit
Unit V V V A A
W
°C °C
COLLECTOR
BASE
JEDEC
―
JEITA
―
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.
2SD2449 Datasheet
