Datasheet Details
| Part number | 2SD2633 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.31 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD2633-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD2633 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.31 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD2633-InchangeSemiconductor.pdf |
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·High DC Current Gain- : hFE = 2000(Min)@ IC= 6A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) =1.5V(Max)@ IC= 6A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A IB Base Current Collector Power Dissipation PC TC=25℃ Collector Power Dissipation Ta=25℃ Tj Junction Temperature 1 A 35 W 2 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SD2633 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A ,IB= 6mA VBE(sat) Base-Emitter Saturation voltage IC= 6A ,IB= 6mA ICBO Collector Cutoff Current VCB= 200V, IE= 0 IEBO Emitter Cutoff Current VEB= 6V;
IC= 0 hFE DC Current Gain IC= 6A ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD2633 | Power Transistor | Sanken |
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