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2SD2639 - NPN Triple Diffused Planar Silicon Transistor

Key Features

  • Package Dimensions unit : mm 2010C [2SB1683 / 2SD2639] 10.2 3.6 5.1 2.7 6.3 4.5 Wide ASO because of on-chip ballast resistance. Good dependence of fT on current and good HF characteristic. 1.3 18.0 5.6 1.2 14.0 0.8 15.1 0.4 1 2 3 2.7 Specifications ( ) : 2SB1683 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Tempera.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN6960 2SB1683 / 2SD2639 2SB1683 : PNP Epitaxial Planar Silicon Transistor 2SD2639 : NPN Triple Diffused Planar Silicon Transistor 2SB1683 / 2SD2639 140V / 12A, AF 60W Output Applications Features • • Package Dimensions unit : mm 2010C [2SB1683 / 2SD2639] 10.2 3.6 5.1 2.7 6.3 4.5 Wide ASO because of on-chip ballast resistance. Good dependence of fT on current and good HF characteristic. 1.3 18.0 5.6 1.2 14.0 0.8 15.1 0.4 1 2 3 2.7 Specifications ( ) : 2SB1683 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 2.