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2SD2636 - Silicon NPN Triple Diffused Type Transistor

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2SD2636 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2636 Power Amplifier Applications High-Power Switching Applications • • High-breakdown voltage: VCEO = 160 V (min) Complementary to 2SB1682 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristic S Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse I ymbol VCBO VCEO VEBO IC CP 15 Rating 160 160 5 8 Unit V V V A 1.Base A W °C °C 2.Collector(heatsink) 3.Emitter IB PC Tj Tstg 1 100 150 −55 to 150 JEDEC ― JEITA ― Note: Using continuously under heavy loads (e.g.
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