Datasheet Summary
isc Silicon NPN Darlington Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown VCE=80V(Min.)
- High DC Current Gain-
: hFE= 1000(Min.)@IC= 3A
- Low Collector Saturation Voltage-
: VCE (sat)= 1.5V(Max.)@ IC= 3A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for power switching...
