Collector-Emitter Breakdown VCE=80V(Min.)
High DC Current Gain-
: hFE= 1000(Min.)@IC= 3A
Low Collector Saturation Voltage-
: VCE (sat)= 1.5V(Max.)@ IC= 3A
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for power switc
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isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown VCE=80V(Min.) ·High DC Current Gain-
: hFE= 1000(Min.)@IC= 3A ·Low Collector Saturation Voltage-
: VCE (sat)= 1.5V(Max.)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continunous
7
A
IB
Base Current-Continunous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
0.2
A
50
W
150
℃
Tstg
Storage Temperature Range
-65~+150 ℃
2SD523
isc website：www.iscsemi.
2SD523 Datasheet
