Datasheet Details
| Part number | 2SD523 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.07 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet | 2SD523_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD523 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.07 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet | 2SD523_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown VCE=80V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 3A ·Low Collector Saturation Voltage- : VCE (sat)= 1.5V(Max.)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continunous 7 A IB Base Current-Continunous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 0.2 A 50 W 150 ℃ Tstg Storage Temperature Range -65~+150 ℃ 2SD523 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Voltage Breakdown IC= 30mA;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD523 | NPN Transistor | Toshiba |
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