The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER)
HIGH POWER SWITCHING APPLICATIONS.
FEATURES • High DC Current Gain : h FE=2000 (Min.) (V CE =3V, I C =3A) • Low Saturation Voltage : vCE(sat)=l-5V (Max.) (I C=3A) • Monolithic Consturction With Built-in Base-Emitter Shunt Resistor.
INDUSTRIAL APPLICATIONS Unit in mm
JZfc5.0MAX
,.
jZfel.OMAX
+ 0.09 0LO-O.O3
30.2 x 0.2
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
EQUIVALENT CIRCUIT
BASEo-
SYMBOL VCBO v CEO VEBO IC IB PC
Tstg
RATING 80 80
UNIT V
0.2 50
150 -65M.50 °C COLLECTOR
1 BASE 2. EMITTER
COLLECTOR (CASE)
TO
3, TB
21 A 1 A
Mounting Kit No.
2SD523 Datasheet
