Datasheet Summary
SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER)
HIGH POWER SWITCHING APPLICATIONS.
Features
- High DC Current Gain : h FE=2000 (Min.) (V CE =3V, I C =3A)
- Low Saturation Voltage : vCE(sat)=l-5V (Max.) (I C=3A)
- Monolithic Consturction With Built-in Base-Emitter Shunt Resistor.
INDUSTRIAL APPLICATIONS Unit in mm
JZfc5.0MAX
,. jZfel.OMAX
+ 0.09 0LO-O.O3
30.2 x 0.2
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
EQUIVALENT CIRCUIT
BASEo-
SYMBOL VCBO v CEO VEBO IC IB PC
Tstg
RATING 80 80
UNIT V
0.2 50
150...
